r09ds0018ej0100 rev.1.00 page 1 of 5 apr 18, 2011 preliminary data sheet pd5759t6j low noise and high gain amplifier ic for impedance converter of microphone description the pd5759t6j is a silicon mos monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. this device exhibits low noise and high voltage gain characteristics. the package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting. features ? low noise : n v = ? 98 dbv typ. @v dd = 2.0 v, c in = 3 pf, r l = 2.2 k : n v = ? 99 dbv typ. @v dd = 2.0 v, c in = 5 pf, r l = 2.2 k ? high gain : g v = +9.0 db typ. @v dd = 2.0 v, c in = 3 pf, r l = 2.2 k : g v = +11.0 db typ. @v dd = 2.0 v, c in = 5 pf, r l = 2.2 k ? low input capacitance : c input = 2.0 pf typ. @v dd = 2.0 v, r l = 2.2 k ? low consumption current : i dd = 310 a typ. @v dd = 2.0 v, r l = 2.2 k ? high-density surface mounting : 3-pin thin-type lead-less minimold (1.2 1.0 0.33 mm) ? built-in the capacitor for rf noise immunity ? high esd voltage applications ? microphone, sensor etc. ordering information part number order number package marking supplying form pd5759t6j-e4 pd5759t6j-e4-a 3-pin thin-type lead-less minimold (pb-free) 6z ? embossed tape 8 mm wide ? pin 3 face the perforation side of the tape ? qty 10 kpcs/reel remark to order evaluation samples, please contact your nearby sales office. part number for sample order: pd5759t6j caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0018ej0100 rev.1.00 apr 18, 2011
pd5759t6j r09ds0018ej0100 rev.1.00 page 2 of 5 apr 18, 2011 absolute maximum ratings (t a = +25 c, unless otherwise specified) parameter symbol ratings unit input voltage (in-gnd) v in ? 0.5 to +0.5 v input current (in-gnd) i in 0.5 ma output voltage (out-gnd) v out 0 to +5 v output current (out-gnd) i out 1 ma channel temperature t ch 130 c operating ambient temperature t a ? 40 to +85 c storage temperature t stg ? 65 to +150 c recommended operating range (t a = +25 c) parameter symbol min. typ. max. unit supply voltage note v dd 1.4 2.0 5.0 v note: r l = 2.2 k electrical characteristics (t a = +25 c, r l = 2.2 k , unless otherwise specified) parameter symbol test conditi ons min. typ. max. unit circuit current i dd v dd = 2.0 v, v in = 0 v 235 310 400 a input capacitance c input v dd = 2.0 v, f = 1 mhz ? 2.0 ? pf voltage gain g v v dd = 2.0 v, v in = 10 mvrms, c in = 3 pf, f = 1 khz, see test circuit 8.0 9.0 10.0 db reduced voltage characteristics g vv v dd = 2.0 1.5 v, v in = 10 mvrms, c in = 3 pf, f = 1 khz, see test circuit ? 1.0 ? db frequency characteristics g vf v dd = 2.0 v, v in = 10 mvrms, c in = 3 pf, f = 1 khz 110 hz, see test circuit ? 0 ? db output noise voltage n v v dd = 2.0 v, v in = 0 vrms, c in = 3 pf, a-curve, see test circuit ? ? 98 ? dbv total harmonic distortion thd v dd = 2.0 v, v out = 50 mvrms, c in = 3 pf, f = 1 khz, see test circuit ? 0.3 ? % test circuit voltage gain, frequency characteristics, output noise voltage, total harmonic distortion 33 f + 2.2 k v in 3 pf in out gnd v dd v out
pd5759t6j r09ds0018ej0100 rev.1.00 page 3 of 5 apr 18, 2011 typical characteristics (t a = +25 c, unless otherwise specified) 600 0 100 200 300 400 500 01 5 r l = 2.2 k 234 12 0 2 4 6 8 10 12 0 2 4 6 8 10 12 0 2 4 6 8 10 01 5 c in = 3 pf r l = 2.2 k v in = 10 mvrms f = 1 khz 234 10 100 1 000 10 000 100 000 v dd = 2 v c in = 3 pf r l = 2.2 k v in = 10 mvrms v dd = 2 v c in = 3 pf r l = 2.2 k f = 1 khz 10 1 0.1 100 1 000 10 12 6 v dd = 2 v r l = 2.2 k v in = 10 mvrms f = 1 khz 345 12 6 5 34 v dd = 2 v r l = 2.2 k v in = 0 vrms ? 95 ? 100 ? 105 supply voltage v dd (v) circuit current i dd ( a) circuit current vs. supply voltage voltage gain g v (db) supply voltage v dd (v) voltage gain vs. supply voltage voltage gain g v (db) frequency f (hz) voltage gain vs. frequency total harmonic distortion thd (%) output voltage v out (mvrms) total harmonic distortion vs. output voltage input capacitance c in (pf) voltage gain g v (db) voltage gain vs. input capacitance output noise voltage n v (dbv) input capacitance c in (pf) output noise voltage vs. input capacitance remark the graphs indicate nominal characteristics.
pd5759t6j r09ds0018ej0100 rev.1.00 page 4 of 5 apr 18, 2011 package dimensions 3-pin thin-type lead-less minimold (unit: mm) 0.11 +0.1 ?0.05 max. 0.33 0.30 +0.1 ?0.05 (0.8) 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.20.05 1.00.1 1.20.1 2 1 3 (0.8) (0.2) (0.2) (bottom view) pin connections 1. out 2. in 3. gnd 6z remark ( ): reference value
pd5759t6j r09ds0018ej0100 rev.1.00 page 5 of 5 apr 18, 2011 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history pd5759t6j data sheet description rev. date page summary 1.00 apr 18, 2011 ? first edition issued
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